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ȫͻߣ
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ߡЧʡFԽʷŴʵ
ϢԴ   ʱ2013-10-23   


ժҪо FƵʷŴĵ¡ṹ롾ԭһƵΪ405 ~ 415 MHzΪ30 dBmʸӡЧʡﵽ65%ġߡЧʡгʧFԽʷ Ϊ˴ﵡɡָһЩġ˽ṹʷŴ F๦ʷŴƥ͡硿гʧƬ˲ء˳ ггС-69 dBc)2pmGaAsHBTFԽʷŴ ʵоƬIJԡ֤ȫ㡿ָ

ؼʣFƵʷŴ˽ṹƥ͡硿гʧ棻Ƭ˲

ͼţTN722 ױʶ룺A ±ţ1003-353X (2009 ) 03-0295-04

Design and Realization of High Efficiency Class F Power Amplifier for

Interphone Application

Nan Jingchang, Liu Lei

(School of Electrics and Information Engineering, Liaoning Technical University, Hidudao 125105, China)

Abstract: Circuit structure and working principle of the Class F power amplifier were presenteda high efficiency and low THD power amplifier for interphone application was designed, working at 405-415 MHz, output power 30 dBmand PAE 65 %some special methods were used in the designincluding the two-stage single end structure power amplifier, output match net of Class F power amplifier, and the design of out of chip filter for big THDdisposing the THD effectively (THD is under - 69 dBc) . At lastthe Class F power amplifier is implemented with 2 pm GaAs HBT technology. After testing of the real chipit proves the results fulfill the design goal.

Key words Class F power amplifier; single end structure; output match net; THD; filter out of chip

EEACC 1220

o

ߵԽӦdz㷺ʱͨһ ӦʵӪɱ͡ķͨ áԼʹ㡿ͬʱ顾ͨϵͳ ССȹͻ¼У ָͨܡ ġߵԽͨ͡ߣ

гλͬԡࡿȡʹ ȥͨṩ᡿ҵࡢ õҵõıԡõԡ͡ ߡƵסЧʡš

ʷŴԽšҪ Ӱ졣ԶԽԱ͡ʡʸӡЧ ʡгʧȼָҪϡߡء㡿
ƲF๦ʷŴģʽ᡾ߡЧʡ ̡ʧһг
2 [im GaAs HBTʵˡߡЧʡF ʷŴ
1 F๦ʷŴԭ

F๦ʷŴʹ˲Ծܡ ѹߡегɷơ ܡ缫ĵѹΡߡΣʹû صСصġġ᡾ߡʷŴġЧʡ

һռձΪ50%ġ ţܿɡΪһأ缫 ĻƵ迹ΪRlߡг迹Ϊ ߡżг迹Ϊ0˾ܡ缫ĵѹ


нигɷһ ڡܡ缫ĸߡг Ϊߡżг迹Ϊ0 صĵнлƵƵʳɷ͡{ż гɷͳʷŴУȾ֪ BŴܵĵ͡Щ ɷFŴصĵB ŴĵһҲǰڵҲ صеĻƵɷRlϲ ʣ{żгɷLCг񡡾͡硿 ·ءˡϵĵѹΡ͡Ρ Ҳûġ[2]

ܡ缫ѹķֵΪ2FdƵɷ Ϊ

n - 7 ^dc (1)

صĵֵΪ/pk ĻƵɷֱ͡ɷֱΪ

/1=

ܵĿӦݡҪ/-ȷ 迹ֵΪ R

op,_ A/pk FŴΪ

^out һ أ ^dc ,pk

ԴṩֱΪ

^dc _ ^dc ^dc أ ^dc ^pk һ ^out

ˡFŴġЧʡΪ100%

FŴĹΪ
㡿ڡߡЧʡгĿ꣬ ˵¡˿ģʽʷŴеFࡾģ ʽгͼ2ΪF๦ʷŴ ˲͡硿


Ϊˡ㡿iwָ迹 7?һѡ5£1ڡҪ᡾ߡЧʡ͡硿Ϊ F๦ʷŴ˲͡硿͡硿 ء㡿ǣ塾ܹʱߡгƵ, Ӿ©˿ġߡг迹Ϊ ¡ߡżгƵӾ©˿ {żг迹Ϊ0·ͼ3Ϊƥ 䡡͡硿ķӷ ԡг˳г迹С, ӡOfl;г迹ܴΪ, 㡿ġۡҪ
ͼ3ƥ͡硿 Fig.3 Simulation results of output matching
3·г

Agilent˾ADSԵ¡ ˷桾ܲ͡2 pm GaAs HBT Guramel-Poonģͣٶģ͵Ľ ȡء㡿Ľ͡· [4]¡õҡ ½Ȼʡ桾͡ЧʡѾ Ҫгʧ桾Ȼϴܡ㡿 ҪԣгʧƬ


ʱAŴߡԼ1.05 dB[3]

2·

Ϊˡ㡿ָ¡˹ʷ ͼ1ΪʷŴṹͼ

4ͼ

ͼʹCadence˾Virtuoso THQuint˾ṩ2 fim GaAs HBTա зŴ·ʹľܲƵģͣ ᡾ߡƵ·׼ȷԡ

һƬƵʷŴİ ͼʮ֡ҪΪͨHBTܵĵ HBTԡ΢Сġͬߡλ÷ġ΢С ᵼ𡿹ӡƽЧӦ Уѹӡһšƽˡλ Ϊ˼ϡƵߵľ롾Ӧ̫ÿ ֱߡӡҪһءףΪ ء׵ĵ׵ϡЧӦЧΪУʹ֮ Ӱ칦ʷŴܡƬ С͡Ҫϲٵ߱ ļ裬ͬʱٳĵ֮ĵų _ϡĵġġ[5]Ҫ THQuint˾ṩҪ·ͼΪ 560 fxm x 540 fim0

5ʵ

Ϊ˲оƬܣҪPCB԰ ϸµֹʱоƬܲӰ졣 Ƶ·PCBӦǡżԣҪ һ°ĵ񡾺͡һЩҪߵĴ ӦProtel 99 SE

ӡƵ·ĻҪл޻ ࣬Ҫǽ糣Ӱ ·迹ŴʣߡƵ¡糣 ǡҪǡĸؼأӦѡ糣 СĻ[6]вRF-4ģ2 壬塾1mmƵҪѭ50 ߵ ԭ򣬶ͬģAppcad ͡ߵء룬㡿ƵΪ50 fl £߿Ϊ40 mmߵء30 mm,ͬʱ ƵҪġϡءףλÿ ءͭͭͨײ áϵ迹͡϶̵ġߡƵ·

ͼ6ΪԴѹΪ3.6 VʱʵоƬIJԽ ͼпƵΪ410 MHzʱ

6

ļҪ FƵʷŴġԭ һԴѹΪ3.6 VƵΪ405 -415 MHz,Ϊ30 dBmFԽ Ŵгʧϴʱһġ гʧ档ʷŴĹղ 2 GaAs HBTաʷŴ¡Agilent ˾ADSԵ¡˷桾͡ ˷Cadence˾ VirtuosoSͼոʵоƬIJ Խ410 MHzġƵ£ Ϊ30 dBm,Ϊ22 dBmʸӡЧʡΪ66% гС-69 dBm,ȫ㡿ָ


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